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   C+‐energy‐dependent residual ion damage in GaAs:C grown by the low‐energy ion‐beam doping method

   by Iida, Tsutomu, Makita, Yunosuke, Shima, Takayuki, Kimura, Shinji, Horn, Joachim, Hartnagel, Hans L., Uekusa, Shin‐ichiro
   Published in Journal of Applied Physics (1996)

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2. Select result number 2
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   Residual ion damage in GaAs:C prepared by combined ion beam and molecular beam epitaxy

   by Iida, Tsutomu, Makita, Yunosuke, Horn, Joachim, Hartnagel, Hans L., Shima, Takayuki, Kimura, Shinji, Shikama, Kazuyuki, Sanpei, Hirokazu, Sandhu, Adarsh, Kobayashi, Naoto, Uekusa, Shin-ichiro
   Published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1997)

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