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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

von Li, Panpan; Li, Hongjian; Li, Zhi ; et al.
veröffentlicht In: Journal of Applied Physics 2015

2

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Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes

von Kang, Junjie; Li, Zhi; Li, Hongjian ; et al.
veröffentlicht In: AIP Advances 2013

3

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Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer

von Kang, Junjie; Li, Hongjian; Li, Zhi ; et al.
veröffentlicht In: Applied Physics Letters 2013

4

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Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

von Li, Hongjian; Li, Panpan; Kang, Junjie ; et al.
veröffentlicht In: Applied Physics Express 2013

5

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The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes

von Li, Zhi; Kang, Junjie; Zhang, Yiyun ; et al.
veröffentlicht In: Journal of Applied Physics 2013

6

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Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

von Li, Zhi; Kang, Junjie; Liu, Zhiqiang ; et al.
veröffentlicht In: AIP Advances 2013

7

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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer

von Li, Hongjian; Kang, Junjie; Li, Panpan ; et al.
veröffentlicht In: Applied Physics Letters 2013

8

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Pyramid Array InGaN/GaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes

von Kang, Junjie; Li, Zhi; Li, Hongjian ; et al.
veröffentlicht In: Applied Physics Express 2013

9

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Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

von Li, Hongjian; Li, Panpan; Kang, Junjie ; et al.
veröffentlicht In: Applied Physics Express 2013

10

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Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region...

von Li, Hongjian; Li, Panpan; Kang, Junjie ; et al.
veröffentlicht In: Applied Physics Express 2013

11

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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

von Li, Zhi; Kang, Junjie; Wei Wang, Bo ; et al.
veröffentlicht In: Journal of Applied Physics 2014

12

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Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering...

von Kang, Junjie; Choi, Hak-Jong; Ren, Fang ; et al.
veröffentlicht In: Japanese Journal of Applied Physics 2019

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