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1764671222794158080 |
access_facet |
Electronic Resources |
author |
Neuburger, Martin |
author_facet |
Neuburger, Martin |
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Neuburger, Martin 1976- |
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(DE-627)612189074, (DE-576)266374441, (DE-599)DNB995437491, (OCoLC)315819513, (DE-101)995437491 |
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spelling |
Neuburger, Martin 1976- (DE-588)132348896 (DE-627)521534593 (DE-576)183976363 aut, Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung Martin Neuburger, 2006, Online-Ressource, Text txt rdacontent, Computermedien c rdamedia, Online-Ressource cr rdacarrier, Ulm, Univ. Diss., 2006, (DE-588)4375592-6 (DE-627)184645883 (DE-576)211782602 Galliumnitrid gnd, (DE-588)4131472-4 (DE-627)105694800 (DE-576)209627557 Feldeffekttransistor gnd, (DE-588)4211873-6 (DE-627)104338903 (DE-576)210206217 HEMT gnd, Hochschulschrift (DE-588)4113937-9 (DE-627)105825778 (DE-576)209480580 gnd-content, Ulm (DE-588)4061529-7 (DE-627)106135341 (DE-576)209140232 uvp, http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-57224 application/pdf Resolving-System kostenfrei Volltext, http://d-nb.info/995437491/34 Langzeitarchivierung Nationalbibliothek Volltext, http://vts.uni-ulm.de/docs/2006/5722/vts_5722_7591.pdf Verlag kostenfrei Volltext, http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-57224 LFER, LFER 2008-02-21T00:00:00Z |
spellingShingle |
Neuburger, Martin, Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung, Galliumnitrid, Feldeffekttransistor, HEMT, Hochschulschrift |
swb_id_str |
266374441 |
title |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung |
title_auth |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung |
title_full |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung Martin Neuburger |
title_fullStr |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung Martin Neuburger |
title_full_unstemmed |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung Martin Neuburger |
title_short |
Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung |
title_sort |
entwurf und technologie von gan heterostruktur fets fur hohe leistung |
topic |
Galliumnitrid, Feldeffekttransistor, HEMT, Hochschulschrift |
topic_facet |
Galliumnitrid, Feldeffekttransistor, HEMT, Hochschulschrift |
url |
http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-57224, http://d-nb.info/995437491/34, http://vts.uni-ulm.de/docs/2006/5722/vts_5722_7591.pdf |
urn |
urn:nbn:de:bsz:289-vts-57224 |