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Buchumschlag von Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
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Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes

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Zeitschriftentitel: AIP Advances
Personen und Körperschaften: Kang, Junjie, Li, Zhi, Li, Hongjian, Liu, Zhiqiang, Ma, Ping, Yi, Xiaoyan, Wang, Guohong
In: AIP Advances, 3, 2013, 7
Medientyp: E-Article
Sprache: Englisch
veröffentlicht:
AIP Publishing
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Zusammenfassung: <jats:p>The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.</jats:p>
ISSN: 2158-3226
DOI: 10.1063/1.4816716