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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
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Zeitschriftentitel: | Journal of Applied Physics |
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Personen und Körperschaften: | , , , , , , |
In: | Journal of Applied Physics, 117, 2015, 7 |
Medientyp: | E-Article |
Sprache: | Englisch |
veröffentlicht: |
AIP Publishing
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author_facet |
Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong |
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author |
Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong |
spellingShingle |
Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong Journal of Applied Physics Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes General Physics and Astronomy |
author_sort |
li, panpan |
spelling |
Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.4906960 <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes Journal of Applied Physics |
doi_str_mv |
10.1063/1.4906960 |
facet_avail |
Online |
format |
ElectronicArticle |
fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA |
id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA |
institution |
DE-15 DE-105 DE-14 DE-Ch1 |
imprint |
AIP Publishing, 2015 |
imprint_str_mv |
AIP Publishing, 2015 |
issn |
0021-8979 1089-7550 |
issn_str_mv |
0021-8979 1089-7550 |
language |
English |
mega_collection |
AIP Publishing (CrossRef) |
match_str |
li2015strongcarrierlocalizationeffectincarrierdynamicsof585nminganamberlightemittingdiodes |
publishDateSort |
2015 |
publisher |
AIP Publishing |
recordtype |
ai |
record_format |
ai |
series |
Journal of Applied Physics |
source_id |
49 |
title |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_unstemmed |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_full |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_fullStr |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_full_unstemmed |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_short |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_sort |
strong carrier localization effect in carrier dynamics of 585 nm ingan amber light-emitting diodes |
topic |
General Physics and Astronomy |
url |
http://dx.doi.org/10.1063/1.4906960 |
publishDate |
2015 |
physical |
|
description |
<jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> |
container_issue |
7 |
container_start_page |
0 |
container_title |
Journal of Applied Physics |
container_volume |
117 |
format_de105 |
Article, E-Article |
format_de14 |
Article, E-Article |
format_de15 |
Article, E-Article |
format_de520 |
Article, E-Article |
format_de540 |
Article, E-Article |
format_dech1 |
Article, E-Article |
format_ded117 |
Article, E-Article |
format_degla1 |
E-Article |
format_del152 |
Buch |
format_del189 |
Article, E-Article |
format_dezi4 |
Article |
format_dezwi2 |
Article, E-Article |
format_finc |
Article, E-Article |
format_nrw |
Article, E-Article |
_version_ |
1792340974498742274 |
geogr_code |
not assigned |
last_indexed |
2024-03-01T16:10:36.025Z |
geogr_code_person |
not assigned |
openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Strong+carrier+localization+effect+in+carrier+dynamics+of+585%E2%80%89nm+InGaN+amber+light-emitting+diodes&rft.date=2015-02-21&genre=article&issn=1089-7550&volume=117&issue=7&jtitle=Journal+of+Applied+Physics&atitle=Strong+carrier+localization+effect+in+carrier+dynamics+of+585%E2%80%89nm+InGaN+amber+light-emitting+diodes&aulast=Wang&aufirst=Guohong&rft_id=info%3Adoi%2F10.1063%2F1.4906960&rft.language%5B0%5D=eng |
SOLR | |
_version_ | 1792340974498742274 |
author | Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong |
author_facet | Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong, Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong |
author_sort | li, panpan |
container_issue | 7 |
container_start_page | 0 |
container_title | Journal of Applied Physics |
container_volume | 117 |
description | <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> |
doi_str_mv | 10.1063/1.4906960 |
facet_avail | Online |
format | ElectronicArticle |
format_de105 | Article, E-Article |
format_de14 | Article, E-Article |
format_de15 | Article, E-Article |
format_de520 | Article, E-Article |
format_de540 | Article, E-Article |
format_dech1 | Article, E-Article |
format_ded117 | Article, E-Article |
format_degla1 | E-Article |
format_del152 | Buch |
format_del189 | Article, E-Article |
format_dezi4 | Article |
format_dezwi2 | Article, E-Article |
format_finc | Article, E-Article |
format_nrw | Article, E-Article |
geogr_code | not assigned |
geogr_code_person | not assigned |
id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA |
imprint | AIP Publishing, 2015 |
imprint_str_mv | AIP Publishing, 2015 |
institution | DE-15, DE-105, DE-14, DE-Ch1 |
issn | 0021-8979, 1089-7550 |
issn_str_mv | 0021-8979, 1089-7550 |
language | English |
last_indexed | 2024-03-01T16:10:36.025Z |
match_str | li2015strongcarrierlocalizationeffectincarrierdynamicsof585nminganamberlightemittingdiodes |
mega_collection | AIP Publishing (CrossRef) |
physical | |
publishDate | 2015 |
publishDateSort | 2015 |
publisher | AIP Publishing |
record_format | ai |
recordtype | ai |
series | Journal of Applied Physics |
source_id | 49 |
spelling | Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.4906960 <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes Journal of Applied Physics |
spellingShingle | Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong, Journal of Applied Physics, Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes, General Physics and Astronomy |
title | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_full | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_fullStr | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_full_unstemmed | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_short | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
title_sort | strong carrier localization effect in carrier dynamics of 585 nm ingan amber light-emitting diodes |
title_unstemmed | Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes |
topic | General Physics and Astronomy |
url | http://dx.doi.org/10.1063/1.4906960 |