Eintrag weiter verarbeiten
Buchumschlag von Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
Verfügbar über Online-Ressource

Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

Gespeichert in:

Bibliographische Detailangaben
Zeitschriftentitel: Journal of Applied Physics
Personen und Körperschaften: Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong
In: Journal of Applied Physics, 117, 2015, 7
Medientyp: E-Article
Sprache: Englisch
veröffentlicht:
AIP Publishing
Schlagwörter:
author_facet Li, Panpan
Li, Hongjian
Li, Zhi
Kang, Junjie
Yi, Xiaoyan
Li, Jinmin
Wang, Guohong
Li, Panpan
Li, Hongjian
Li, Zhi
Kang, Junjie
Yi, Xiaoyan
Li, Jinmin
Wang, Guohong
author Li, Panpan
Li, Hongjian
Li, Zhi
Kang, Junjie
Yi, Xiaoyan
Li, Jinmin
Wang, Guohong
spellingShingle Li, Panpan
Li, Hongjian
Li, Zhi
Kang, Junjie
Yi, Xiaoyan
Li, Jinmin
Wang, Guohong
Journal of Applied Physics
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
General Physics and Astronomy
author_sort li, panpan
spelling Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.4906960 <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes Journal of Applied Physics
doi_str_mv 10.1063/1.4906960
facet_avail Online
format ElectronicArticle
fullrecord blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA
id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA
institution DE-15
DE-105
DE-14
DE-Ch1
imprint AIP Publishing, 2015
imprint_str_mv AIP Publishing, 2015
issn 0021-8979
1089-7550
issn_str_mv 0021-8979
1089-7550
language English
mega_collection AIP Publishing (CrossRef)
match_str li2015strongcarrierlocalizationeffectincarrierdynamicsof585nminganamberlightemittingdiodes
publishDateSort 2015
publisher AIP Publishing
recordtype ai
record_format ai
series Journal of Applied Physics
source_id 49
title Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_unstemmed Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_full Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_fullStr Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_full_unstemmed Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_short Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_sort strong carrier localization effect in carrier dynamics of 585 nm ingan amber light-emitting diodes
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.4906960
publishDate 2015
physical
description <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p>
container_issue 7
container_start_page 0
container_title Journal of Applied Physics
container_volume 117
format_de105 Article, E-Article
format_de14 Article, E-Article
format_de15 Article, E-Article
format_de520 Article, E-Article
format_de540 Article, E-Article
format_dech1 Article, E-Article
format_ded117 Article, E-Article
format_degla1 E-Article
format_del152 Buch
format_del189 Article, E-Article
format_dezi4 Article
format_dezwi2 Article, E-Article
format_finc Article, E-Article
format_nrw Article, E-Article
_version_ 1792340974498742274
geogr_code not assigned
last_indexed 2024-03-01T16:10:36.025Z
geogr_code_person not assigned
openURL url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Strong+carrier+localization+effect+in+carrier+dynamics+of+585%E2%80%89nm+InGaN+amber+light-emitting+diodes&rft.date=2015-02-21&genre=article&issn=1089-7550&volume=117&issue=7&jtitle=Journal+of+Applied+Physics&atitle=Strong+carrier+localization+effect+in+carrier+dynamics+of+585%E2%80%89nm+InGaN+amber+light-emitting+diodes&aulast=Wang&aufirst=Guohong&rft_id=info%3Adoi%2F10.1063%2F1.4906960&rft.language%5B0%5D=eng
SOLR
_version_ 1792340974498742274
author Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong
author_facet Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong, Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong
author_sort li, panpan
container_issue 7
container_start_page 0
container_title Journal of Applied Physics
container_volume 117
description <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p>
doi_str_mv 10.1063/1.4906960
facet_avail Online
format ElectronicArticle
format_de105 Article, E-Article
format_de14 Article, E-Article
format_de15 Article, E-Article
format_de520 Article, E-Article
format_de540 Article, E-Article
format_dech1 Article, E-Article
format_ded117 Article, E-Article
format_degla1 E-Article
format_del152 Buch
format_del189 Article, E-Article
format_dezi4 Article
format_dezwi2 Article, E-Article
format_finc Article, E-Article
format_nrw Article, E-Article
geogr_code not assigned
geogr_code_person not assigned
id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ5MDY5NjA
imprint AIP Publishing, 2015
imprint_str_mv AIP Publishing, 2015
institution DE-15, DE-105, DE-14, DE-Ch1
issn 0021-8979, 1089-7550
issn_str_mv 0021-8979, 1089-7550
language English
last_indexed 2024-03-01T16:10:36.025Z
match_str li2015strongcarrierlocalizationeffectincarrierdynamicsof585nminganamberlightemittingdiodes
mega_collection AIP Publishing (CrossRef)
physical
publishDate 2015
publishDateSort 2015
publisher AIP Publishing
record_format ai
recordtype ai
series Journal of Applied Physics
source_id 49
spelling Li, Panpan Li, Hongjian Li, Zhi Kang, Junjie Yi, Xiaoyan Li, Jinmin Wang, Guohong 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.4906960 <jats:p>Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.</jats:p> Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes Journal of Applied Physics
spellingShingle Li, Panpan, Li, Hongjian, Li, Zhi, Kang, Junjie, Yi, Xiaoyan, Li, Jinmin, Wang, Guohong, Journal of Applied Physics, Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes, General Physics and Astronomy
title Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_full Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_fullStr Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_full_unstemmed Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_short Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
title_sort strong carrier localization effect in carrier dynamics of 585 nm ingan amber light-emitting diodes
title_unstemmed Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.4906960