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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

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Zeitschriftentitel: Journal of Applied Physics
Personen und Körperschaften: Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.
In: Journal of Applied Physics, 127, 2020, 2
Medientyp: E-Article
Sprache: Englisch
veröffentlicht:
AIP Publishing
Schlagwörter:
author_facet Renz, A. B.
Shah, V. A.
Vavasour, O. J.
Bonyadi, Y.
Li, F.
Dai, T.
Baker, G. W. C.
Hindmarsh, S.
Han, Y.
Walker, M.
Sharma, Y.
Liu, Y.
Raghothamachar, B.
Dudley, M.
Mawby, P. A.
Gammon, P. M.
Renz, A. B.
Shah, V. A.
Vavasour, O. J.
Bonyadi, Y.
Li, F.
Dai, T.
Baker, G. W. C.
Hindmarsh, S.
Han, Y.
Walker, M.
Sharma, Y.
Liu, Y.
Raghothamachar, B.
Dudley, M.
Mawby, P. A.
Gammon, P. M.
author Renz, A. B.
Shah, V. A.
Vavasour, O. J.
Bonyadi, Y.
Li, F.
Dai, T.
Baker, G. W. C.
Hindmarsh, S.
Han, Y.
Walker, M.
Sharma, Y.
Liu, Y.
Raghothamachar, B.
Dudley, M.
Mawby, P. A.
Gammon, P. M.
spellingShingle Renz, A. B.
Shah, V. A.
Vavasour, O. J.
Bonyadi, Y.
Li, F.
Dai, T.
Baker, G. W. C.
Hindmarsh, S.
Han, Y.
Walker, M.
Sharma, Y.
Liu, Y.
Raghothamachar, B.
Dudley, M.
Mawby, P. A.
Gammon, P. M.
Journal of Applied Physics
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
General Physics and Astronomy
author_sort renz, a. b.
spelling Renz, A. B. Shah, V. A. Vavasour, O. J. Bonyadi, Y. Li, F. Dai, T. Baker, G. W. C. Hindmarsh, S. Han, Y. Walker, M. Sharma, Y. Liu, Y. Raghothamachar, B. Dudley, M. Mawby, P. A. Gammon, P. M. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.5133739 <jats:p>Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.</jats:p> The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment Journal of Applied Physics
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title The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_unstemmed The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_full The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_fullStr The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_full_unstemmed The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_short The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_sort the improvement of mo/4h-sic schottky diodes via a p2o5 surface passivation treatment
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.5133739
publishDate 2020
physical
description <jats:p>Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.</jats:p>
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author Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.
author_facet Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M., Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.
author_sort renz, a. b.
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description <jats:p>Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.</jats:p>
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spelling Renz, A. B. Shah, V. A. Vavasour, O. J. Bonyadi, Y. Li, F. Dai, T. Baker, G. W. C. Hindmarsh, S. Han, Y. Walker, M. Sharma, Y. Liu, Y. Raghothamachar, B. Dudley, M. Mawby, P. A. Gammon, P. M. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.5133739 <jats:p>Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.</jats:p> The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment Journal of Applied Physics
spellingShingle Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M., Journal of Applied Physics, The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment, General Physics and Astronomy
title The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_full The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_fullStr The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_full_unstemmed The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_short The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
title_sort the improvement of mo/4h-sic schottky diodes via a p2o5 surface passivation treatment
title_unstemmed The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.5133739