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A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers
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Zeitschriftentitel: | Microwave and Optical Technology Letters |
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Personen und Körperschaften: | , , |
In: | Microwave and Optical Technology Letters, 50, 2008, 9, S. 2430-2434 |
Medientyp: | E-Article |
Sprache: | Englisch |
veröffentlicht: |
Wiley
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Schlagwörter: |
author_facet |
Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen |
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author |
Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen |
spellingShingle |
Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen Microwave and Optical Technology Letters A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
author_sort |
huang, jian‐ming |
spelling |
Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen 0895-2477 1098-2760 Wiley Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/mop.23693 <jats:title>Abstract</jats:title><jats:p>An opto‐electronic integrated circuit based on the hybrid scheme for an optical receiver front‐end is presented in this article. The proposed integrated circuit adopts the CMOS technology as the vehicle to integrate the InP‐based waveguide photodetector into the transimpedance amplifier (TIA) circuit. A regulated cascade structure is used to reduce the input impedance of the TIA. Hence, the proposed integrated circuit can achieve a very high bandwidth provided that the parasitic capacitance of the photodetector is up to 1 pF. The 3‐dB bandwidth and the transimpedance gain of the proposed circuit are 1 GHz and 64.5 dBΩ, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2430–2434, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23693</jats:p> A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers Microwave and Optical Technology Letters |
doi_str_mv |
10.1002/mop.23693 |
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Wiley, 2008 |
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2008 |
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Wiley |
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Microwave and Optical Technology Letters |
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49 |
title |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_unstemmed |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_full |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_fullStr |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_full_unstemmed |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_short |
A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_sort |
a cmos opto‐electronic single chip using the hybrid scheme for optical receivers |
topic |
Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
url |
http://dx.doi.org/10.1002/mop.23693 |
publishDate |
2008 |
physical |
2430-2434 |
description |
<jats:title>Abstract</jats:title><jats:p>An opto‐electronic integrated circuit based on the hybrid scheme for an optical receiver front‐end is presented in this article. The proposed integrated circuit adopts the CMOS technology as the vehicle to integrate the InP‐based waveguide photodetector into the transimpedance amplifier (TIA) circuit. A regulated cascade structure is used to reduce the input impedance of the TIA. Hence, the proposed integrated circuit can achieve a very high bandwidth provided that the parasitic capacitance of the photodetector is up to 1 pF. The 3‐dB bandwidth and the transimpedance gain of the proposed circuit are 1 GHz and 64.5 dBΩ, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2430–2434, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23693</jats:p> |
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author | Huang, Jian‐Ming, Wang, Chua‐Chin, Chiu, Yi‐Jen |
author_facet | Huang, Jian‐Ming, Wang, Chua‐Chin, Chiu, Yi‐Jen, Huang, Jian‐Ming, Wang, Chua‐Chin, Chiu, Yi‐Jen |
author_sort | huang, jian‐ming |
container_issue | 9 |
container_start_page | 2430 |
container_title | Microwave and Optical Technology Letters |
container_volume | 50 |
description | <jats:title>Abstract</jats:title><jats:p>An opto‐electronic integrated circuit based on the hybrid scheme for an optical receiver front‐end is presented in this article. The proposed integrated circuit adopts the CMOS technology as the vehicle to integrate the InP‐based waveguide photodetector into the transimpedance amplifier (TIA) circuit. A regulated cascade structure is used to reduce the input impedance of the TIA. Hence, the proposed integrated circuit can achieve a very high bandwidth provided that the parasitic capacitance of the photodetector is up to 1 pF. The 3‐dB bandwidth and the transimpedance gain of the proposed circuit are 1 GHz and 64.5 dBΩ, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2430–2434, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23693</jats:p> |
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series | Microwave and Optical Technology Letters |
source_id | 49 |
spelling | Huang, Jian‐Ming Wang, Chua‐Chin Chiu, Yi‐Jen 0895-2477 1098-2760 Wiley Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/mop.23693 <jats:title>Abstract</jats:title><jats:p>An opto‐electronic integrated circuit based on the hybrid scheme for an optical receiver front‐end is presented in this article. The proposed integrated circuit adopts the CMOS technology as the vehicle to integrate the InP‐based waveguide photodetector into the transimpedance amplifier (TIA) circuit. A regulated cascade structure is used to reduce the input impedance of the TIA. Hence, the proposed integrated circuit can achieve a very high bandwidth provided that the parasitic capacitance of the photodetector is up to 1 pF. The 3‐dB bandwidth and the transimpedance gain of the proposed circuit are 1 GHz and 64.5 dBΩ, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2430–2434, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23693</jats:p> A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers Microwave and Optical Technology Letters |
spellingShingle | Huang, Jian‐Ming, Wang, Chua‐Chin, Chiu, Yi‐Jen, Microwave and Optical Technology Letters, A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers, Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
title | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_full | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_fullStr | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_full_unstemmed | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_short | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
title_sort | a cmos opto‐electronic single chip using the hybrid scheme for optical receivers |
title_unstemmed | A CMOS opto‐electronic single chip using the hybrid scheme for optical receivers |
topic | Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
url | http://dx.doi.org/10.1002/mop.23693 |