Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications: Growth model investigati...

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Zeitschriftentitel:	physica status solidi (a)
Personen und Körperschaften:	Aidam, Rolf, Diwo, Elke, Godejohann, Birte-Julia, Kirste, Lutz, Quay, Rüdiger, Ambacher, Oliver
In:	physica status solidi (a), 211, 2014, 12, S. 2854-2860
Medientyp:	E-Article
Sprache:	Englisch
veröffentlicht:	Wiley
Schlagwörter:	Materials Chemistry Electrical and Electronic Engineering Surfaces, Coatings and Films Surfaces and Interfaces Condensed Matter Physics Electronic, Optical and Magnetic Materials