Further processing options
online resource

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

Bibliographic Details
Journal Title: International Journal of Microwave and Wireless Technologies
Authors and Corporations: Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan, Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger
In: International Journal of Microwave and Wireless Technologies, 10, 2018, 5-6, p. 666-673
Media Type: E-Article
Language: English
published:
Cambridge University Press (CUP)
Subjects:
finc.format ElectronicArticle
finc.mega_collection Cambridge University Press (CUP) (CrossRef)
finc.id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAxNy9zMTc1OTA3ODcxODAwMDU4Mg
finc.source_id 49
ris.type EJOUR
rft.atitle Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
rft.epage 673
rft.genre article
rft.issn 1759-0787
1759-0795
rft.issue 5-6
rft.jtitle International Journal of Microwave and Wireless Technologies
rft.tpages 8
rft.pages 666-673
rft.pub Cambridge University Press (CUP)
rft.date 2018-06-01
x.date 2018-06-01T00:00:00Z
rft.spage 666
rft.volume 10
abstract <jats:title>Abstract</jats:title><jats:p>We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (<jats:italic>P</jats:italic><jats:sub>out</jats:sub>) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm<jats:sup>2</jats:sup>AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.</jats:p>
authors Array ( [rft.aulast] => Gerrer [rft.aufirst] => Thomas )
Array ( [rft.aulast] => Cimalla [rft.aufirst] => Volker )
Array ( [rft.aulast] => Waltereit [rft.aufirst] => Patrick )
Array ( [rft.aulast] => Müller [rft.aufirst] => Stefan )
Array ( [rft.aulast] => Benkhelifa [rft.aufirst] => Fouad )
Array ( [rft.aulast] => Maier [rft.aufirst] => Thomas )
Array ( [rft.aulast] => Czap [rft.aufirst] => Heiko )
Array ( [rft.aulast] => Ambacher [rft.aufirst] => Oliver )
Array ( [rft.aulast] => Quay [rft.aufirst] => Rüdiger )
doi 10.1017/s1759078718000582
languages eng
url http://dx.doi.org/10.1017/s1759078718000582
version 0.9
x.subjects Electrical and Electronic Engineering
x.type journal-article
openURL url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fwww.ub.uni-leipzig.de%3Agenerator&rft.title=Transfer+of+AlGaN%2FGaN+RF-devices+onto+diamond+substrates+via+van+der+Waals+bonding&rft.date=2018-06-01&genre=article&issn=1759-0795&volume=10&issue=5-6&spage=666&epage=673&pages=666-673&jtitle=International+Journal+of+Microwave+and+Wireless+Technologies&atitle=Transfer+of+AlGaN%2FGaN+RF-devices+onto+diamond+substrates+via+van+der+Waals+bonding&aulast=Quay&aufirst=R%C3%BCdiger&rft_id=info%3Adoi%2F10.1017%2Fs1759078718000582&rft.language%5B0%5D=eng
SOLR
_version_ 1721069604186357770
access_facet Electronic Resources
author Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan, Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger
author_facet Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan, Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger, Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan, Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger
author_sort gerrer, thomas
branch_nrw Electronic Resources
container_issue 5-6
container_start_page 666
container_title International Journal of Microwave and Wireless Technologies
container_volume 10
description <jats:title>Abstract</jats:title><jats:p>We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (<jats:italic>P</jats:italic><jats:sub>out</jats:sub>) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm<jats:sup>2</jats:sup>AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.</jats:p>
doi_str_mv 10.1017/s1759078718000582
facet_avail Online
finc_class_facet Mathematik, Physik, Technik
format ElectronicArticle
format_de105 Article, E-Article
format_de14 Article, E-Article
format_de15 Article, E-Article
format_de520 Article, E-Article
format_de540 Article, E-Article
format_dech1 Article, E-Article
format_ded117 Article, E-Article
format_degla1 E-Article
format_del152 Buch
format_del189 Article, E-Article
format_dezi4 Article
format_dezwi2 Article, E-Article
format_finc Article, E-Article
format_nrw Article, E-Article
geogr_code not assigned
geogr_code_person not assigned
id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAxNy9zMTc1OTA3ODcxODAwMDU4Mg
imprint Cambridge University Press (CUP), 2018
imprint_str_mv Cambridge University Press (CUP), 2018
institution DE-Ch1, DE-Gla1, DE-D161, DE-Brt1, DE-Pl11, DE-Rs1, DE-D275, DE-82, DE-15, DE-105, DE-L229, DE-Bn3, DE-Zi4, DE-14
issn 1759-0795, 1759-0787
language English
last_indexed 2022-01-04T23:44:37.957Z
mega_collection Cambridge University Press (CUP) (CrossRef)
physical 666-673
publishDate 2018
publishDateSort 2018
publisher Cambridge University Press (CUP)
recordtype ai
score 18,63882
series International Journal of Microwave and Wireless Technologies
source_id 49
spelling Gerrer, Thomas Cimalla, Volker Waltereit, Patrick Müller, Stefan Benkhelifa, Fouad Maier, Thomas Czap, Heiko Ambacher, Oliver Quay, Rüdiger 1759-0787 1759-0795 Cambridge University Press (CUP) Electrical and Electronic Engineering http://dx.doi.org/10.1017/s1759078718000582 <jats:title>Abstract</jats:title><jats:p>We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (<jats:italic>P</jats:italic><jats:sub>out</jats:sub>) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm<jats:sup>2</jats:sup>AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.</jats:p> Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding International Journal of Microwave and Wireless Technologies
spellingShingle Gerrer, Thomas, Cimalla, Volker, Waltereit, Patrick, Müller, Stefan, Benkhelifa, Fouad, Maier, Thomas, Czap, Heiko, Ambacher, Oliver, Quay, Rüdiger, International Journal of Microwave and Wireless Technologies, Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding, Electrical and Electronic Engineering
title Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
title_full Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
title_fullStr Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
title_full_unstemmed Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
title_short Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
title_sort transfer of algan/gan rf-devices onto diamond substrates via van der waals bonding
topic Electrical and Electronic Engineering
url http://dx.doi.org/10.1017/s1759078718000582