Further processing options
available via online resource

Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiG...

Saved in:

Bibliographic Details
Journal Title: Physical Review Letters
Authors and Corporations: Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G.
In: Physical Review Letters, 74, 1995, 16, p. 3213-3216
Media Type: E-Article
Language: English
published:
American Physical Society (APS)
Subjects:
finc.format ElectronicArticle
finc.mega_collection American Physical Society (APS) (CrossRef)
finc.id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwMy9waHlzcmV2bGV0dC43NC4zMjEz
finc.source_id 49
ris.type EJOUR
rft.atitle Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
rft.epage 3216
rft.genre article
rft.issn 0031-9007
1079-7114
rft.issue 16
rft.jtitle Physical Review Letters
rft.tpages 4
rft.pages 3213-3216
rft.pub American Physical Society (APS)
rft.date 1995-04-17
x.date 1995-04-17T00:00:00Z
rft.spage 3213
rft.volume 74
authors Array ( [rft.aulast] => Turner [rft.aufirst] => A. R. )
Array ( [rft.aulast] => Pemble [rft.aufirst] => M. E. )
Array ( [rft.aulast] => Fernández [rft.aufirst] => J. M. )
Array ( [rft.aulast] => Joyce [rft.aufirst] => B. A. )
Array ( [rft.aulast] => Zhang [rft.aufirst] => J. )
Array ( [rft.aulast] => Taylor [rft.aufirst] => A. G. )
doi 10.1103/physrevlett.74.3213
languages eng
url http://dx.doi.org/10.1103/physrevlett.74.3213
version 0.9
x.subjects General Physics and Astronomy
x.type journal-article
openURL url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fwww.ub.uni-leipzig.de%3Agenerator&rft.title=Real+Time+Observation+of+Reflectance+Anisotropy+and+Reflection+High-Energy+Electron+Diffraction+Intensity+Oscillations+During+Gas-Source+Molecular-Beam-Epitaxy+Growth+of+Si+and+SiGe+on+Si%28001%29&rft.date=1995-04-17&genre=article&issn=1079-7114&volume=74&issue=16&spage=3213&epage=3216&pages=3213-3216&jtitle=Physical+Review+Letters&atitle=Real+Time+Observation+of+Reflectance+Anisotropy+and+Reflection+High-Energy+Electron+Diffraction+Intensity+Oscillations+During+Gas-Source+Molecular-Beam-Epitaxy+Growth+of+Si+and+SiGe+on+Si%28001%29&aulast=Taylor&aufirst=A.+G.&rft_id=info%3Adoi%2F10.1103%2Fphysrevlett.74.3213&rft.language%5B0%5D=eng
SOLR
_version_ 1774408514500820997
access_facet Electronic Resources
author Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G.
author_facet Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G.
author_sort turner, a. r.
branch_nrw Electronic Resources
container_issue 16
container_start_page 3213
container_title Physical Review Letters
container_volume 74
description
doi_str_mv 10.1103/physrevlett.74.3213
facet_avail Online
format ElectronicArticle
format_de105 Article, E-Article
format_de14 Article, E-Article
format_de15 Article, E-Article
format_de520 Article, E-Article
format_de540 Article, E-Article
format_dech1 Article, E-Article
format_ded117 Article, E-Article
format_degla1 E-Article
format_del152 Buch
format_del189 Article, E-Article
format_dezi4 Article
format_dezwi2 Article, E-Article
format_finc Article, E-Article
format_nrw Article, E-Article
geogr_code not assigned
geogr_code_person not assigned
id ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwMy9waHlzcmV2bGV0dC43NC4zMjEz
imprint American Physical Society (APS), 1995
imprint_str_mv American Physical Society (APS), 1995
institution DE-14, DE-Gla1, DE-D161, DE-Zi4, DE-D275, DE-L229, DE-Rs1, DE-Brt1, DE-15, DE-Ch1, DE-105, DE-Bn3, DE-Pl11
issn 0031-9007, 1079-7114
issn_str_mv 0031-9007, 1079-7114
language English
last_indexed 2023-08-16T17:43:30.189Z
match_str turner1995realtimeobservationofreflectanceanisotropyandreflectionhighenergyelectrondiffractionintensityoscillationsduringgassourcemolecularbeamepitaxygrowthofsiandsigeonsi001
mega_collection American Physical Society (APS) (CrossRef)
physical 3213-3216
publishDate 1995
publishDateSort 1995
publisher American Physical Society (APS)
recordtype ai
score 18,81834
series Physical Review Letters
source_id 49
spelling Turner, A. R. Pemble, M. E. Fernández, J. M. Joyce, B. A. Zhang, J. Taylor, A. G. 0031-9007 1079-7114 American Physical Society (APS) General Physics and Astronomy http://dx.doi.org/10.1103/physrevlett.74.3213 Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) Physical Review Letters
spellingShingle Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Physical Review Letters, Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001), General Physics and Astronomy
title Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
title_full Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
title_fullStr Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
title_full_unstemmed Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
title_short Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)
title_sort real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of si and sige on si(001)
topic General Physics and Astronomy
url http://dx.doi.org/10.1103/physrevlett.74.3213