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Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiG...
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Journal Title: | Physical Review Letters |
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Authors and Corporations: | , , , , , |
In: | Physical Review Letters, 74, 1995, 16, p. 3213-3216 |
Media Type: | E-Article |
Language: | English |
published: |
American Physical Society (APS)
|
Subjects: |
finc.format |
ElectronicArticle |
---|---|
finc.mega_collection |
American Physical Society (APS) (CrossRef) |
finc.id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwMy9waHlzcmV2bGV0dC43NC4zMjEz |
finc.source_id |
49 |
ris.type |
EJOUR |
rft.atitle |
Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
rft.epage |
3216 |
rft.genre |
article |
rft.issn |
0031-9007 1079-7114 |
rft.issue |
16 |
rft.jtitle |
Physical Review Letters |
rft.tpages |
4 |
rft.pages |
3213-3216 |
rft.pub |
American Physical Society (APS) |
rft.date |
1995-04-17 |
x.date |
1995-04-17T00:00:00Z |
rft.spage |
3213 |
rft.volume |
74 |
authors |
Array
(
[rft.aulast] => Turner
[rft.aufirst] => A. R.
)
Array ( [rft.aulast] => Pemble [rft.aufirst] => M. E. ) Array ( [rft.aulast] => Fernández [rft.aufirst] => J. M. ) Array ( [rft.aulast] => Joyce [rft.aufirst] => B. A. ) Array ( [rft.aulast] => Zhang [rft.aufirst] => J. ) Array ( [rft.aulast] => Taylor [rft.aufirst] => A. G. ) |
doi |
10.1103/physrevlett.74.3213 |
languages |
eng |
url |
http://dx.doi.org/10.1103/physrevlett.74.3213 |
version |
0.9 |
x.subjects |
General Physics and Astronomy |
x.type |
journal-article |
openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fwww.ub.uni-leipzig.de%3Agenerator&rft.title=Real+Time+Observation+of+Reflectance+Anisotropy+and+Reflection+High-Energy+Electron+Diffraction+Intensity+Oscillations+During+Gas-Source+Molecular-Beam-Epitaxy+Growth+of+Si+and+SiGe+on+Si%28001%29&rft.date=1995-04-17&genre=article&issn=1079-7114&volume=74&issue=16&spage=3213&epage=3216&pages=3213-3216&jtitle=Physical+Review+Letters&atitle=Real+Time+Observation+of+Reflectance+Anisotropy+and+Reflection+High-Energy+Electron+Diffraction+Intensity+Oscillations+During+Gas-Source+Molecular-Beam-Epitaxy+Growth+of+Si+and+SiGe+on+Si%28001%29&aulast=Taylor&aufirst=A.+G.&rft_id=info%3Adoi%2F10.1103%2Fphysrevlett.74.3213&rft.language%5B0%5D=eng |
SOLR | |
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access_facet | Electronic Resources |
author | Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G. |
author_facet | Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G. |
author_sort | turner, a. r. |
branch_nrw | Electronic Resources |
container_issue | 16 |
container_start_page | 3213 |
container_title | Physical Review Letters |
container_volume | 74 |
description | |
doi_str_mv | 10.1103/physrevlett.74.3213 |
facet_avail | Online |
format | ElectronicArticle |
format_de105 | Article, E-Article |
format_de14 | Article, E-Article |
format_de15 | Article, E-Article |
format_de520 | Article, E-Article |
format_de540 | Article, E-Article |
format_dech1 | Article, E-Article |
format_ded117 | Article, E-Article |
format_degla1 | E-Article |
format_del152 | Buch |
format_del189 | Article, E-Article |
format_dezi4 | Article |
format_dezwi2 | Article, E-Article |
format_finc | Article, E-Article |
format_nrw | Article, E-Article |
geogr_code | not assigned |
geogr_code_person | not assigned |
id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwMy9waHlzcmV2bGV0dC43NC4zMjEz |
imprint | American Physical Society (APS), 1995 |
imprint_str_mv | American Physical Society (APS), 1995 |
institution | DE-14, DE-Gla1, DE-D161, DE-Zi4, DE-D275, DE-L229, DE-Rs1, DE-Brt1, DE-15, DE-Ch1, DE-105, DE-Bn3, DE-Pl11 |
issn | 0031-9007, 1079-7114 |
issn_str_mv | 0031-9007, 1079-7114 |
language | English |
last_indexed | 2023-08-16T17:43:30.189Z |
match_str | turner1995realtimeobservationofreflectanceanisotropyandreflectionhighenergyelectrondiffractionintensityoscillationsduringgassourcemolecularbeamepitaxygrowthofsiandsigeonsi001 |
mega_collection | American Physical Society (APS) (CrossRef) |
physical | 3213-3216 |
publishDate | 1995 |
publishDateSort | 1995 |
publisher | American Physical Society (APS) |
recordtype | ai |
score | 18,81834 |
series | Physical Review Letters |
source_id | 49 |
spelling | Turner, A. R. Pemble, M. E. Fernández, J. M. Joyce, B. A. Zhang, J. Taylor, A. G. 0031-9007 1079-7114 American Physical Society (APS) General Physics and Astronomy http://dx.doi.org/10.1103/physrevlett.74.3213 Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) Physical Review Letters |
spellingShingle | Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Physical Review Letters, Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001), General Physics and Astronomy |
title | Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
title_full | Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
title_fullStr | Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
title_full_unstemmed | Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
title_short | Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001) |
title_sort | real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of si and sige on si(001) |
topic | General Physics and Astronomy |
url | http://dx.doi.org/10.1103/physrevlett.74.3213 |