Search Results
-
1
Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy
by Zhang, J., Taylor, A. G., Lees, A. K., Fernández, J. M., Joyce, B. A., Raisbeck, D., Shukla, N., Pemble, M. E.Published in Physical Review B (1996)Get additional information online
E-Article -
2
Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)
by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.Published in Physica Status Solidi (a) (1995)Get additional information online
E-Article -
3
Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiG...
by Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G.Published in Physical Review Letters (1995)Get additional information online
E-Article -
4
In-Situ mechanistic studies of the reaction of trimethylgallium and phosphine in zeolite H-Y
by Anderson, M. W., Logothetis, G. K., Pemble, M. E., Taylor, A. G., Wallace, N. C., Yates, H. M.Published in Advanced Materials for Optics and Electronics (1993)Get additional information online
E-Article -
5
Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy
by Armstrong, S. R., Pemble, M. E., Taylor, A. G., Fawcette, P. N., Neave, J. H., Joyce, B. A., Zhang, J.Published in Applied Physics Letters (1993)Get additional information online
E-Article