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  1. 1
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    Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)

    by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.
    Published in Physica Status Solidi (a) (1995)
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  2. 2
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    Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiG...

    by Turner, A. R., Pemble, M. E., Fernández, J. M., Joyce, B. A., Zhang, J., Taylor, A. G.
    Published in Physical Review Letters (1995)
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