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Gap state formation during the initial oxidation of Si(100)-2×1
by Bitzer, T., Rada, T., Richardson, N. V., Dittrich, T., Koch, F.Published in Applied Physics Letters (2000)Get additional information online
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Due to an error in printing, the following article, originally published in the 4 August 1997 issue, is being republished in its entirety.Demonstration of an imide coupling reactio...
by Bitzer, T., Richardson, N. V.Published in Applied Physics Letters (1997)Get additional information online
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The adsorption of alcohols on hydroxylated Si(100)-2 × 1
by Bitzer, T., Richardson, N.V., Schiffrin, D.J.Published in Surface Science (1997)Get additional information online
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Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)
by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.Published in Physica Status Solidi (a) (1995)Get additional information online
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Electrochemically prepared Si(111) 1×1‐H surface
by Bitzer, T., Gruyters, M., Lewerenz, H. J., Jacobi, K.Published in Applied Physics Letters (1993)Get additional information online
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Electrolytic Hydrogenation of Silicon
by Lewerenz, H. J., Bitzer, T.Published in Journal of The Electrochemical Society (1992)Get additional information online
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In situ preparation of hydrogen-terminated silicon single-crystal surfaces
by Bitzer, T., Lewerenz, H.J.Published in Surface Science (1992)Get additional information online
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