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  1. 1
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    Unusual nanostructures of “lattice matched” InP on AlInAs

    by Gocalinska, A., Manganaro, M., Juska, G., Dimastrodonato, V., Thomas, K., Joyce, B. A., Zhang, J., Vvedensky, D. D., Pelucchi, E.
    Published in Applied Physics Letters (2014)
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  2. 2
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    Influence of atomic hydrogen on step stability during homoepitaxial growth on vicinal GaAs surfaces

    by Tejedor, P., Crespillo, M. L., Joyce, B. A.
    Published in Applied Physics Letters (2006)
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  3. 3
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    Monte Carlo Simulation of GaAs(001) Homoepitaxy

    by Itoh, M., Bell, G. R., Joyce, B. A., Vvedensky, D. D.
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  4. 4
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    In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

    by Joyce, B. A., Zhang, J., Taylor, A. G., Xie, M. H., Fernández, J. M., Lees, A. K.
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  5. 5
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    Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

    by Tok, E. S., Jones, T. S., Neave, J. H., Zhang, J., Joyce, B. A.
    Published in Applied Physics Letters (1997)
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  6. 6
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    Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

    by Yamaguchi, H., Fahy, M. R., Joyce, B. A.
    Published in Applied Physics Letters (1996)
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  7. 7
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    Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)

    by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.
    Published in Physica Status Solidi (a) (1995)
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  8. 8
    online resource

    Si‐induced island formation and surface ordering on GaAs(001)‐c(4×4)

    by Avery, A. R., Sudijono, J., Holmes, D. M., Jones, T. S., Joyce, B. A.
    Published in Applied Physics Letters (1995)
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  9. 9
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    Determination of the excess surface arsenic concentration in the metalorganic molecular beam epitaxial growth of GaAs using TMGa and As2

    by Kaneko, T., Joyce, B. A., Naji, O., Jones, T. S.
    Published in Applied Physics Letters (1995)
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  10. 10
    online resource

    Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

    by Fernández, J. M., Xie, M. H., Matsumura, A., Mokler, S. M., Zhang, J., Joyce, B. A.
    Published in Materials Science and Technology (1995)
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  11. 11
    online resource

    Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy

    by Holmes, D. M., Belk, J. G., Sudijono, J. L., Neave, J. H., Jones, T. S., Joyce, B. A.
    Published in Applied Physics Letters (1995)
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  12. 12
    online resource

    Reflection high‐energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy

    by Xie, M. H., Zhang, J., Mokler, S. M., Fernández, J. M., Joyce, B. A.
    Published in Applied Physics Letters (1994)
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  13. 13
    online resource

    Reflection high‐energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A

    by Fahy, M. R., Sato, K., Joyce, B. A.
    Published in Applied Physics Letters (1994)
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  14. 14
    online resource

    Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

    by Armstrong, S. R., Pemble, M. E., Taylor, A. G., Fawcette, P. N., Neave, J. H., Joyce, B. A., Zhang, J.
    Published in Applied Physics Letters (1993)
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  15. 15
    online resource

    Transient growth rate change during gas source molecular beam epitaxy of Si1−xGexalloys

    by Ohtani, N., Mokler, S. M., Xie, M. H., Zhang, J., Joyce, B. A.
    Published in Applied Physics Letters (1993)
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  16. 16
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    Reflection high‐energy electron diffraction intensity oscillations and anisotropy on vicinal AlAs(001) during molecular‐beam epitaxy

    by Shitara, T., Neave, J. H., Joyce, B. A.
    Published in Applied Physics Letters (1993)
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  17. 17
    online resource

    Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films

    by Neave, J. H., Zhang, J., Zhang, X. M., Fawcett, P. N., Joyce, B. A.
    Published in Applied Physics Letters (1993)
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  18. 18
    online resource

    Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system

    by Fahy, M. R., Ashwin, M. J., Harris, J. J., Newman, R. C., Joyce, B. A.
    Published in Applied Physics Letters (1992)
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  19. 19
    online resource

    Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane

    by Mokler, S. M., Liu, W. K., Ohtani, N., Joyce, B. A.
    Published in Applied Physics Letters (1992)
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  20. 20
    online resource

    Reflection‐high‐energy‐electron‐diffraction intensity oscillations of Si(111) during gas source molecular beam epitaxy

    by Liu, W. K., Mokler, S. M., Ohtani, N., Zhang, J., Joyce, B. A.
    Published in Applied Physics Letters (1992)
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