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Large magnetoelectric coupling in nanoscaleBiFeO3from direct electrical measurements
by Goswami, Sudipta, Bhattacharya, Dipten, Keeney, Lynette, Maity, Tuhin, Kaushik, S. D., Siruguri, V., Das, Gopes C., Yang, Haifang, Li, Wuxia, Gu, Chang-zhi, Pemble, M. E., Roy, SaibalPublished in Physical Review B (2014)Get additional information online
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The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition
by Zhang, P. F., Deepak, N., Keeney, L., Pemble, M. E., Whatmore, R. W.Published in Applied Physics Letters (2012)Get additional information online
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Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
by O’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, É., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E.Published in Applied Physics Letters (2010)Get additional information online
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Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2
by Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K., Newcomb, S. B.Published in Applied Physics Letters (2009)Get additional information online
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Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
by O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V., Hurley, P. K.Published in Applied Physics Letters (2009)Get additional information online
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Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
by Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K., Newcomb, S. B.Published in Applied Physics Letters (2008)Get additional information online
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In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
by O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G., Newcomb, S. B.Published in Applied Physics Letters (2008)Get additional information online
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Anomalous inverse absorption features in the far-infrared RAIRS spectra of SnCl4 on thin-film SnO2 surfaces
by Pilling, M. J., Le Vent, S., Gardner, P., Awaluddin, A., Wincott, P. L., Pemble, M. E., Surman, M.Published in The Journal of Chemical Physics (2002)Get additional information online
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Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)
by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.Published in Physica Status Solidi (a) (1995)Get additional information online
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Decomposition of Cyanoethylphosphine, Benzylphosphine, and Cyclopentylphosphine during InP MOCVD Growth Studied by FTIR Spectroscopy: Criteria for the Design of Organophosphine Pre...
by Abdul‐Ridha, H. H., Bateman, J. E., Fan, G. H., Pemble, M. E., Povey, I. M.Published in Journal of The Electrochemical Society (1994)Get additional information online
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Diary of conferences and symposia
by Pemble, M. E.Published in Advanced Materials for Optics and Electronics (1994)Get additional information online
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General discussion
by Ristic, R. I., Shekunov, B. Yu., Sherwood, J. N., Davey, R. J., Chernov, A. A., Pidduck, A., Tsukamoto, K., Parkinson, G. M., van der Eerden, J. P., Roberts, K. J., Mohammadi, M., Rohl, A. L., Hillner, P., Maginn, S. J., Bain, C. D., Heywood, B., Pemble, M. E., Parsons, R., Frenken, J. W. M., Reynhout, M. J., Hopwood, J. D., Collins, I. R., Twomey, T. A., Cundy, C. S., Stone, F. S., Bennema, P., Benton, W. J., Keller, A.Published in Faraday Discussions (1993)Get additional information online
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In-Situ mechanistic studies of the reaction of trimethylgallium and phosphine in zeolite H-Y
by Anderson, M. W., Logothetis, G. K., Pemble, M. E., Taylor, A. G., Wallace, N. C., Yates, H. M.Published in Advanced Materials for Optics and Electronics (1993)Get additional information online
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Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy
by Armstrong, S. R., Pemble, M. E., Taylor, A. G., Fawcette, P. N., Neave, J. H., Joyce, B. A., Zhang, J.Published in Applied Physics Letters (1993)Get additional information online
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Book reviews
by Russell, D. K., Heal, G. R., Mile, B., Whitehead, J. C., Logan, D. E., Elk, S. B., Pemble, M. E., Sluckin, T. J., Buscall, R., Sodeau, J. R., Choudhary, V. R., Beddard, G. S., Handy, N. C.Published in Journal of the Chemical Society, Faraday Transactions (1992)Get additional information online
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