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  1. 1
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    Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)

    by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.
    Published in Physica Status Solidi (a) (1995)
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  2. 2
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    In-Situ mechanistic studies of the reaction of trimethylgallium and phosphine in zeolite H-Y

    by Anderson, M. W., Logothetis, G. K., Pemble, M. E., Taylor, A. G., Wallace, N. C., Yates, H. M.
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  3. 3
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    Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

    by Armstrong, S. R., Pemble, M. E., Taylor, A. G., Fawcette, P. N., Neave, J. H., Joyce, B. A., Zhang, J.
    Published in Applied Physics Letters (1993)
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