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  1. 1
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    In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

    by Joyce, B. A., Zhang, J., Taylor, A. G., Xie, M. H., Fernández, J. M., Lees, A. K.
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  2. 2
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    Reflectance anisotropy from non-III–V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110)

    by Pemble, M. E., Shukla, N., Turner, A. R., Fernandez, J. M., Joyce, B. A., Zhang, J., Taylor, A. G., Bitzer, T., Frederick, B. G., Kitching, K. J., Richardson, N. V.
    Published in Physica Status Solidi (a) (1995)
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  3. 3
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    In-Situ mechanistic studies of the reaction of trimethylgallium and phosphine in zeolite H-Y

    by Anderson, M. W., Logothetis, G. K., Pemble, M. E., Taylor, A. G., Wallace, N. C., Yates, H. M.
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